Veronique Bornand

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Institut Charles Gerhardt Montpellier

Veronique Bornand
Chercheur - CR1, Equipe C2M


04 67 14 48 88
veronique.bornand@univ-montp2.fr

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2017
2015
2013
2012
2011
2009
2008
2006
2005
  • J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet and F. Gorelli
    Pressure-induced low-symmetry phases in Ti-rich lead zirconate titanate PbZr0.20Ti0.80O3,
    J. Eur. Ceram. Soc. 2005, 25, 2393-2396
  • J. Haines, J. Rouquette, V. Bornand, M. Pintard and Ph. Papet
    Pressure-induced rotation of the spontaneous polarization in monoclinic and triclinic lead zirconate titanate,
    Phys. Rev. B 2005, 70, 1-10
  • J. Rouquette, J. Haines, V. Bornand, M. Pintard and Ph. Papet
    Pressure-induced rotation of the spontaneous polarization in monoclinic and ticlinic Lead Zirconate Titanate,
    Phys. Rev. B 2005, 71, 024112, 1-10
  • V. Bornand and Ph. Papet
    Structure-Properties relationships in LiNbO3-based multilayered ferroelectric structure,
    IEEE Dielectrics and Electrical Insulation Society 2005, 12, 466-468
  • V. Bornand and Ph. Papet
    Reliability and effectiveness of LiNbO3 ferroelectric films sputtered on ITO-based conductive electrode,
    Mater. Chem. Phys. 2005, 92 (2-3), 424-430
2004
  • J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, S. Hull and W G. Marshall
    Pressure tuning of piezoelectric properties for technological applications,
    ISIS Science Highlights 2004
  • J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, Ch. Bousquet, L. Konczewicz, F. Gorelli and S. Hull
    Pressure-tuning of the morphotropic phase boundary in piezoelectric lead zirconate titanate,
    Phys. Rev. B 2004, 70, 014108
  • J. Rouquette, V. Bornand, J. Haines, M. Pintard and Ph. Papet
    Etude du système PZT en pression et en températue, études cristallographiques, spectroscopiques et diélectriques,
    journal de physique iv 2004, 113, 143-149
  • Ph. Papet, J. Rouquette, V. Bornand, J. Haines, M. Pintard and P. Armand
    Structural transitions versus pressure and temperature in the PZT phase diagram,
    J. Electroceramics 2004, 13, 311-314
  • J. Haines, J. Rouquette, V. Bornand, M. Pintard and Ph. Papet
    Le paramètre pression, un outil pour l'optimisation des matériaux piézoélectriques,
    journal de physique iv 2004, 122, 21-26
  • J. Haines, J. Rouquette, V. Bornand, Ph. Papet, J M. Léger and S. Hull
    Neutron and X-ray diffraction studies of piezoelectric materials under non-ambient conditions,
    Mat. Sci. For. 2004, 443-444, 277-282
  • V. Bornand, J. Rouquette, J. Haines, M. Pintard and Ph. Papet
    Structure and behavior of low-temperature high pressure perovskite compounds in the PZT system,
    Integrated Ferroelectrics 2004, 62, 43-47
  • V. Bornand, B. Gautier and Ph. Papet
    Growth and nanoscale ferroelectric investigation of r.f. sputtered LiNbO3 thin films,
    Mater. Chem. Phys. 2004, 86, 340-346
2003
  • J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, B. Bonnet and F. Gorelli
    P-T phase diagram of PbZr0.52Ti0.48O3 (PZT).,
    Solid State Science 2003, 5, 451-457
  • J. Rouquette, V. Bornand, J. Haines, M. Pintard and Ph. Papet
    Effect of high pressure and low temperature on the phase stability of Pb(Zr0.52Ti0.48)O3 ceramics,
    Ferroelectrics 2003, 288, 147-158
  • J. Haines, J. Rouquette, V. Bornand, M. Pintard, Ph. Papet and F. Gorelli
    Raman scattering studies at high pressure and low-temperature, Technique and application to the piezoelectric material PbZr0.52Ti0.48O3,
    J. Raman Spectroscopy 2003, 34(7-8), 519-523
  • V. Bornand and Ph. Papet
    Growth technologies and studies of ferrolectric thin films. Application to LiTaO3 and LiNbO3 materials,
    Ferroelectrics 2003, 288, 187-197
2002
  • J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, R. Astier, J M. Léger and F. Gorelli
    Transition to a cubic phase with symmetry-breaking desorder in PbZr0.52Ti0.48O3 (PZT) at high pressure,
    Phys. Rev. B 2002, 65, 1-4
  • J. Rouquette, V. Bornand, J. Haines, Ph. Papet and F. Gorelli
    Structural transformation and pressure-induced phase transition in PZT,
    Integrated Ferroelectrics 2002, 48, 53-58
  • V. Bornand, I. Huet and Ph. Papet
    Multi-step growth of oriented LiNbO3 thin films,
    Integrated Ferroelectrics 2002, 45, 69-78
  • V. Bornand, I. Huet and Ph. Papet
    LiNbO3 thin films deposited on Si substrates, a morphological development study,
    Mater. Chem. Phys. 2002, 77, 571-577
  • V. Bornand, I. Huet, D. Chateigner and Ph. Papet
    Oriented growth of LiNbO3 thin films,
    Mat. Sci. For. 2002, 408-412, 1573-1578
  • V. Bornand, I. Huet, D. Chateigner, J F. Bardeau and Ph. Papet
    An alternative route for the synthesis of oriented LiNbO3 thin films,
    Integrated Ferroelectrics 2002, 43, 51-64

Institut Charles Gerhardt Montpellier - Direction

UMR 5253 - CNRS/UM/ENSCM
  • Université de Montpellier
  • Place Eugène Bataillon
  • CC 1700 - Bâtiment 17 -1er étage
  • Tel: +33 (0)4 67 14 93 50
  • Email: direction@icgm.fr

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